• image of Niobium Oxide Capacitors>NOSD227M004R0100
  • image of Niobium Oxide Capacitors>NOSD227M004R0100
NOSD227M004R0100
Niobium Oxide Capacitors
KYOCERA AVX
CAP NIOB OXIDE
-
Tape & Reel (TR)
500
1

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image of Niobium Oxide Capacitors>NOSD227M004R0100
image of Niobium Oxide Capacitors>NOSD227M004R0100
NOSD227M004R0100
Niobium Oxide Capacitors
KYOCERA AVX
CAP NIOB OXIDE
-
Tape & Reel (TR)
0
1
NOSD227M004R0100
英飞凌-Infineon
STACKS IPM
NOSD227M004R0100
英飞凌-Infineon
IGBT MODULE 1200V 1600A
NOSD227M004R0100
英飞凌-Infineon
IGBT MODULE 1700V 800A
NOSD227M004R0100
英飞凌-Infineon
IGBT MODULE 1700V 1200A
NOSD227M004R0100
英飞凌-Infineon
IGBT MODULE 1700V 600A
NOSD227M004R0100
英飞凌-Infineon
IGBT MODULE 1200V 1000A
NOSD227M004R0100
英飞凌-Infineon
IGBT MODULE 1200V 1200A
NOSD227M004R0100
英飞凌-Infineon
IGBT MODULE 1200V 600A
NOSD227M004R0100
英飞凌-Infineon
IGBT MODULE 1700V 1800A
NOSD227M004R0100
英飞凌-Infineon
IGBT MODULE 1200V 800A
NOSD227M004R0100
英飞凌-Infineon
IGBT MODULE 1700V 800A
NOSD227M004R0100
英飞凌-Infineon
IGBT MODULE 1700V 2400A
NOSD227M004R0100
三星-Samsung
移动处理器
NOSD227M004R0100
三星-Samsung
移动处理器
NOSD227M004R0100
三星-Samsung
The Industry's First Quad-core Mobile Processor with 32nm HKMG Process
NOSD227M004R0100
三星-Samsung
移动处理器
NOSD227M004R0100
三星-Samsung
移动处理器
NOSD227M004R0100
三星-Samsung
移动处理器
NOSD227M004R0100
三星-Samsung
移动处理器
NOSD227M004R0100
三星-Samsung
Mobile Processor for Possibilities beyond a Component
NOSD227M004R0100
三星-Samsung
移动处理器
NOSD227M004R0100
三星-Samsung
调制解调器
NOSD227M004R0100
三星-Samsung
移动处理器
NOSD227M004R0100
三星-Samsung
调制解调器
NOSD227M004R0100
三星-Samsung
5G 处理器
NOSD227M004R0100
三星-Samsung
调制解调器
NOSD227M004R0100
三星-Samsung
移动处理器
NOSD227M004R0100
三星-Samsung
移动处理器
NOSD227M004R0100
三星-Samsung
移动处理器
NOSD227M004R0100
宜鼎-Innodisk
nanoSSD
NOSD227M004R0100
宜鼎-Innodisk
nanoSSD
NOSD227M004R0100
宜鼎-Innodisk
nanoSSD
NOSD227M004R0100
宜鼎-Innodisk
nanoSSD
NOSD227M004R0100
力特-Littelfuse
PolySwitch®自恢复器件
NOSD227M004R0100
力特-Littelfuse
PolySwitch®自恢复器件
NOSD227M004R0100
力特-Littelfuse
PolySwitch®自恢复器件
NOSD227M004R0100
力特-Littelfuse
PolySwitch®自恢复器件
NOSD227M004R0100
力特-Littelfuse
PolySwitch®自恢复器件
NOSD227M004R0100
力特-Littelfuse
PolySwitch®自恢复器件
NOSD227M004R0100
力特-Littelfuse
PolySwitch®自恢复器件
NOSD227M004R0100
力特-Littelfuse
PolySwitch®自恢复器件
NOSD227M004R0100
力特-Littelfuse
PolySwitch®自恢复器件
NOSD227M004R0100
力特-Littelfuse
PolySwitch®自恢复器件
NOSD227M004R0100
力特-Littelfuse
PolySwitch®自恢复器件
NOSD227M004R0100
力特-Littelfuse
PolySwitch®自恢复器件
NOSD227M004R0100
力特-Littelfuse
PolySwitch®自恢复器件
NOSD227M004R0100
力特-Littelfuse
PolySwitch®自恢复器件
NOSD227M004R0100
力特-Littelfuse
PolySwitch®自恢复器件
NOSD227M004R0100
SONOTEC
检漏仪
NOSD227M004R0100
ThermometerSite
工业温度计
NOSD227M004R0100
英飞凌-Infineon
STACKS IPM
NOSD227M004R0100
英飞凌-Infineon
IGBT MODULE 1200V 1600A
NOSD227M004R0100
英飞凌-Infineon
IGBT MODULE 1700V 800A
NOSD227M004R0100
英飞凌-Infineon
IGBT MODULE 1700V 1200A
NOSD227M004R0100
英飞凌-Infineon
IGBT MODULE 1700V 600A
NOSD227M004R0100
英飞凌-Infineon
IGBT MODULE 1200V 1000A
NOSD227M004R0100
英飞凌-Infineon
IGBT MODULE 1200V 1200A
NOSD227M004R0100
英飞凌-Infineon
IGBT MODULE 1200V 600A
NOSD227M004R0100
英飞凌-Infineon
IGBT MODULE 1700V 1800A
NOSD227M004R0100
英飞凌-Infineon
IGBT MODULE 1200V 800A
NOSD227M004R0100
英飞凌-Infineon
IGBT MODULE 1700V 800A
NOSD227M004R0100
英飞凌-Infineon
IGBT MODULE 1700V 2400A
NOSD227M004R0100
三星-Samsung
移动处理器
NOSD227M004R0100
三星-Samsung
移动处理器
NOSD227M004R0100
三星-Samsung
The Industry's First Quad-core Mobile Processor with 32nm HKMG Process
NOSD227M004R0100
三星-Samsung
移动处理器
NOSD227M004R0100
三星-Samsung
移动处理器
NOSD227M004R0100
三星-Samsung
移动处理器
NOSD227M004R0100
三星-Samsung
移动处理器
NOSD227M004R0100
三星-Samsung
Mobile Processor for Possibilities beyond a Component
NOSD227M004R0100
三星-Samsung
移动处理器
NOSD227M004R0100
三星-Samsung
调制解调器
NOSD227M004R0100
三星-Samsung
移动处理器
NOSD227M004R0100
三星-Samsung
调制解调器
NOSD227M004R0100
三星-Samsung
5G 处理器
NOSD227M004R0100
三星-Samsung
调制解调器
NOSD227M004R0100
三星-Samsung
移动处理器
NOSD227M004R0100
三星-Samsung
移动处理器
NOSD227M004R0100
三星-Samsung
移动处理器
NOSD227M004R0100
宜鼎-Innodisk
nanoSSD
NOSD227M004R0100
宜鼎-Innodisk
nanoSSD
NOSD227M004R0100
宜鼎-Innodisk
nanoSSD
NOSD227M004R0100
宜鼎-Innodisk
nanoSSD
NOSD227M004R0100
力特-Littelfuse
PolySwitch®自恢复器件
NOSD227M004R0100
力特-Littelfuse
PolySwitch®自恢复器件
NOSD227M004R0100
力特-Littelfuse
PolySwitch®自恢复器件
NOSD227M004R0100
力特-Littelfuse
PolySwitch®自恢复器件
NOSD227M004R0100
力特-Littelfuse
PolySwitch®自恢复器件
NOSD227M004R0100
力特-Littelfuse
PolySwitch®自恢复器件
NOSD227M004R0100
力特-Littelfuse
PolySwitch®自恢复器件
NOSD227M004R0100
力特-Littelfuse
PolySwitch®自恢复器件
NOSD227M004R0100
力特-Littelfuse
PolySwitch®自恢复器件
NOSD227M004R0100
力特-Littelfuse
PolySwitch®自恢复器件
NOSD227M004R0100
力特-Littelfuse
PolySwitch®自恢复器件
NOSD227M004R0100
力特-Littelfuse
PolySwitch®自恢复器件
NOSD227M004R0100
力特-Littelfuse
PolySwitch®自恢复器件
NOSD227M004R0100
力特-Littelfuse
PolySwitch®自恢复器件
NOSD227M004R0100
力特-Littelfuse
PolySwitch®自恢复器件
NOSD227M004R0100
SONOTEC
检漏仪
NOSD227M004R0100
ThermometerSite
工业温度计
PDF(1)
TYPEDESCRIPTION
MfrKYOCERA AVX
SeriesOxiCap® NOS
PackageTape & Reel (TR)
Product StatusACTIVE
Tolerance±20%
FeaturesLow ESR
Package / Case2917 (7343 Metric)
Size / Dimension0.287" L x 0.169" W (7.30mm x 4.30mm)
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 125°C
Manufacturer Size CodeD
Dissipation Factor8%
Supplier Device Package2917 (7343 Metric)
Height - Seated (Max)0.122" (3.10mm)
Capacitance220 µF
Voltage - Rated4 V
ESR (Equivalent Series Resistance)100 mOhms
Current - Leakage17.6 µA

137 9851 2083

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